SiSS5112DN - Vishay

SiSS5112DN N-Channel MOSFET

www.vishay.com SiSS5112DN Vishay Siliconix N-Channel 100 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration 1 4 3 S 2 S S G Bottom View 100 0.0149 0.0185 8 40.7 Single FEATURES • TrenchFET® Gen.

Features

• TrenchFET® Gen V power MOSFET
• Very low RDS x Qg figure-of-merit (FOM)
• Tuned for the lowest RDS x Qoss FOM
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Synchronous rectification
• Primary side switch
• DC/DC converters
• Power supplies
• Motor drive control D G N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8S SiSS5112DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage C.