SiSS12DN - Vishay

SiSS12DN N-Channel MOSFET

www.vishay.com SiSS12DN Vishay Siliconix N-Channel 40 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 40 0.00198 0.00274 28.7 60 a, g Single FEATURES • TrenchFET® G.

Features

• TrenchFET® Gen IV power MOSFET
• Very low RDS(on) in a compact and thermally enhanced package
• Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D
• Synchronous rectification
• Synchronous buck converter
• High power density DC/DC
• OR-ing G
• Load switching N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8S SiSS12DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise n.