SiSS05DN - Vishay

SiSS05DN P-Channel MOSFET

www.vishay.com SiSS05DN Vishay Siliconix P-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 7 5 D 8 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) g Configuration 1 4 3 S 2 S S G Bottom View -30 0.0035 0.0058 37 -108 Single FEATURES • TrenchFET® Gen .

Features

• TrenchFET® Gen IV p-channel power MOSFET
• Provides exceptionally low RDS(on) in a compact package that is thermally enhanced
• Enables higher power density
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Battery management in mobile devices
• Adapter and charger switch
• Circuit protection
• Load switch G S D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8S SiSS05DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL .