www.vishay.com SiSS10DN Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () (MAX.) 0.00265 at VGS = 10 V 0.00360 at VGS = 4.5 V ID (A) a, g 60 60 Qg (TYP.) 23 nC PowerPAK® 1212-8S D D D 6 7 5 D 8 3.3 mm 1 Top View 3.3 mm 1 4 3 S 2 S S G Bottom View Ordering Information: SiSS10DN-T1-GE3 (lead (Pb)-free .
• TrenchFET® Gen IV power MOSFET
• Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
• High power density DC/DC
• VRMs and embedded DC/DC
• Synchronous buck converter
• Load switching
• Battery management
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SiSS12DN |
Vishay |
N-Channel MOSFET | |
2 | SiSS178LDN |
Vishay |
N-Channel MOSFET | |
3 | SiSS05DN |
Vishay |
P-Channel MOSFET | |
4 | SiSS23DN |
Vishay |
P-Channel 20V (D-S) MOSFET | |
5 | SiSS27ADN |
Vishay |
P-Channel 30V (D-S) MOSFET | |
6 | SiSS27DN |
Vishay |
P-Channel 30 V (D-S) MOSFET | |
7 | SISS27DN-T1-GE3 |
Kexin |
30V P-Channel MOSFET | |
8 | SISS28DN |
Vishay |
N-Channel MOSFET | |
9 | SISS40DN |
Vishay |
N-Channel MOSFET | |
10 | SiSS4402DN |
Vishay |
N-Channel MOSFET | |
11 | SiSS4409DN |
Vishay |
P-Channel MOSFET | |
12 | SiSS5112DN |
Vishay |
N-Channel MOSFET |