STS26N3LLH6 - STMicroelectronics

STS26N3LLH6 N-channel Power MOSFET

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 8 76 5 1 2 34 SO-8 Figure 1. Internal schematic diagram Table 1. Device summary Order code STS26N3LLH6 Marking 26G3L Packag SO-8 Packaging Tape and reel Octo.

Features

Type STS26N3LLH6 VDSS 30 V RDS(on) max 0.0044 Ω
■ RDS(on)
* Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
■ Very low switching gate charge ID 26 A Applications
■ Switching applications Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 8 76 5 1 2 34 SO-8 Figure 1. Internal schematic diagram Table 1. Device summary Order code STS26N3LLH6 Marking 26G3L Packag.