STS2622A - SamHop Microelectronics

STS2622A Dual N-Channel MOSFET

Green Product STS2622A Ver 2.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 20V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3.4A R DS(ON) (m Ω) Max 60 @ VGS=4.5V 90 @ VGS=2.5V SOT 26 Top View D1 D2 G1 S2 G2 1 2 3 6 5 4 D1 S.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3.4A R DS(ON) (m Ω) Max 60 @ VGS=4.5V 90 @ VGS=2.5V SOT 26 Top View D1 D2 G1 S2 G2 1 2 3 6 5 4 D1 S1 D2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 3.4 2.7 13.5 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL C.