STS2620 - SamHop Microelectronics

STS2620 Dual Enhancement Mode Field Effect Transistor

S T S 2620 S amHop Microelectronics C orp. F eb,25 2005 V er1.1 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 20V P R ODUC T S UMMAR Y (P -C hannel) V DS S -20V ID 2.5A R DS (ON) ( m W ) Max ID -2A R DS (ON) ( m W ) Max 80 @ V G S = 4.5V 110 @ V G S = 2.5V D1 130 @ V G S = -4.5V 190 @ V.

Features

0 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID =2.5A V GS = 2.5V, ID= 2A V DS = 5V, V GS = 4.5V V DS = 5V, ID =2.5A Min Typ C Max Unit 20 1 100 0.5 0.8 65 90 6 7 223 68 53 1.5 80 110 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Dr.