STS20T10 is designed with trench technology to provide excellent low Vf. Those devices are suitable for use for switching power supply. PIN CONFIGURATION (TO-220) FEATURE Vf<=0.65V Fast Switching Speed Low Forward Voltage, Reliable High Temperature Operation Lead Free, RoHS Compliance ORDERING INFORMATION Part Number Package STS20T10T220RGB TO-220 ※ .
tain View, Ca 94040 USA www.stansontech.com Copyright © 2015, Stanson Corp. STS20T10 2015. V1 STS20T10 Low Vf Schottky Diode 20.0A ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Reverse Breakdown Voltage Instantaneous Forward Voltage Instantaneous Reverse Current VBR VF IR IR = 10mA 100 V IF = 5A, TJ = 25℃ 0.65 IF = 10A, TJ = 25℃ IF = 5A, TJ = 125℃ 0.75 V 0.5 IF = 10A, TJ = 125℃ 0.65 VR = 100V, TJ = 25℃ 200 uA VR = 100V, TJ = 125℃ 20 mA STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stanso.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STS20N3LLH6 |
STMicroelectronics |
N-channel MOSFET | |
2 | STS20NHS3LL |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
3 | STS21 |
Sensirion |
Temperature Sensor IC | |
4 | STS2300 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
5 | STS2300S |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
6 | STS2301 |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor | |
7 | STS2301A |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor | |
8 | STS2302A |
SamHop Microelectronics |
N-Channel MOSFET | |
9 | STS2302S |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
10 | STS2305 |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor | |
11 | STS2305A |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor | |
12 | STS2306 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |