STS26N3LLH6 |
Part Number | STS26N3LLH6 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 8 ... |
Features |
Type STS26N3LLH6
VDSS 30 V
RDS(on) max
0.0044 Ω
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge ID 26 A Applications ■ Switching applications Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 8 76 5 1 2 34 SO-8 Figure 1. Internal schematic diagram Table 1. Device summary Order code STS26N3LLH6 Marking 26G3L Packag... |
Document |
STS26N3LLH6 Data Sheet
PDF 724.63KB |
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