S amHop Microelectronics C orp. S T S 2611 F E B 25 2005 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -2.8A R DS (ON) S uper high dense cell design for low R DS (ON ). 90 @ V G S = -4.5V 150 @ V G S = -2.5V R ugged and reliable. S OT-26 package. 1 2 5 6 TS OP 6 Top View D D .
er OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 12V, V DS =0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -2.5A V GS = -2.5V, ID = -1.0A V DS = -5V, V GS = -4.5V V DS = -5V, ID = -2.5A Min Typ C Max Unit -20 1 100 -0.5 -0.8 -1.5 75 -7 6 380 100 60 90 125 150 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current For.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STS2601 |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor | |
2 | STS2620 |
SamHop Microelectronics |
Dual Enhancement Mode Field Effect Transistor | |
3 | STS2620A |
SamHop |
Dual Enhancement Mode Field Effect Transistor | |
4 | STS2621 |
SamHop Microelectronics |
Dual P -Channel Enhancement Mode Field Effect Transistor | |
5 | STS2622 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
6 | STS2622A |
SamHop Microelectronics |
Dual N-Channel MOSFET | |
7 | STS26N3LLH6 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STS20N3LLH6 |
STMicroelectronics |
N-channel MOSFET | |
9 | STS20NHS3LL |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
10 | STS20T10 |
STANSON |
Low Vf Schottky Diode | |
11 | STS21 |
Sensirion |
Temperature Sensor IC | |
12 | STS2300 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |