STS2622 - SamHop Microelectronics

STS2622 Dual N-Channel Enhancement Mode Field Effect Transistor

S T S 2622 S amHop Microelectronics C orp. F eb,25 2005 V er1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 2.5A R DS (ON) S uper high dense cell design for low R DS (ON ). 80 @ V G S = 4.5V 110 @ V G S = 2.5V R ugged and reliable. TS OP 6 package. D1 D2 TS OP 6 Top View G1 .

Features

OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID =2A V GS = 2.5V, ID= 1A V DS = 5V, V GS = 4.5V V DS = 5V, ID =2.5A Min Typ C Max Unit 20 1 100 0.5 0.8 65 90 6 7 220 67 50 1.5 80 110 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A .