STS2601 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -20V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-26 package. ID -4.0A R DS(ON) (m Ω) Max 80 @ VGS=-4.5V 110 @ VGS=-2.5V SOT 26 Top View D D D G 1 2 3 6 5 4 D D S S G ABSOLUTE MAXIMUM RATING.
Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-26 package. ID -4.0A R DS(ON) (m Ω) Max 80 @ VGS=-4.5V 110 @ VGS=-2.5V SOT 26 Top View D D D G 1 2 3 6 5 4 D D S S G ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage a ID www.DataSheet4U.com Drain Current-Continuous IDM PD TJ, TSTG -Pulsed b TA=25°C TA=70°C TA=25°C TA=70°C Limit -20 ±12 -4.0 -3.2 -16 2 1.28 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHAR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STS2611 |
SamHop Microelectronics |
P-Channel E nhancement Mode Field Effect Transistor | |
2 | STS2620 |
SamHop Microelectronics |
Dual Enhancement Mode Field Effect Transistor | |
3 | STS2620A |
SamHop |
Dual Enhancement Mode Field Effect Transistor | |
4 | STS2621 |
SamHop Microelectronics |
Dual P -Channel Enhancement Mode Field Effect Transistor | |
5 | STS2622 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
6 | STS2622A |
SamHop Microelectronics |
Dual N-Channel MOSFET | |
7 | STS26N3LLH6 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STS20N3LLH6 |
STMicroelectronics |
N-channel MOSFET | |
9 | STS20NHS3LL |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
10 | STS20T10 |
STANSON |
Low Vf Schottky Diode | |
11 | STS21 |
Sensirion |
Temperature Sensor IC | |
12 | STS2300 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |