STS2300 - SamHop Microelectronics

STS2300 N-Channel Enhancement Mode Field Effect Transistor

S amHop Microelectronics C orp. S T S 2300 MAR . 10 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 3.8A R DS (ON) S uper high dense cell design for low R DS (ON ). 40 @ V G S = 4.5V 60 @ V G S = 2.5V 75 @ V G S = 1.8V R ugged and reliable. S OT-23 package. D S OT-23 D S G G .

Features

ro Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) V GS = 0V, ID = 250uA V DS = 20V, V GS =0V V GS = 10V, V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID =5.0A V GS = 2.5V, ID =4.0A V GS = 1.8V, ID =1.0A On-S tate Drain Current Forward Transconductance ID(ON) g FS c S ymbol Condition Min Typ C Max Unit 20 1 100 0.6 0.78 1.5 32 50 62 18 5 888 144 115 40 60 75 V uA nA V m-ohm m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance V DS = 5V, V GS = 4.5V V DS = 5V, ID = 5A A S PF PF PF DYNAMIC CHAR ACTE R IS TI.