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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA.
·With TO-220 packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
60
IDM
Drain Current-Single Pulsed
240
PD
Total Dissipation
150
Tj
Operating Junction Temperature
175
Tstg
Storage Temperature
-65~175
UNIT V V A A W ℃ ℃
·THE.
STP60NE06-16 - ST Microelectronics
This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP60NE06L-16 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 2 | STP60NE06L-16FP |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 3 | STP60NE03L-10 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 4 | STP60NE03L-12 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 5 | STP60NE10 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 6 | STP60N043DM9 |
STMicroelectronics |
N-CHANNEL Power MOSFET |
|
| 7 | STP60N05-14 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 8 | STP60N05-16 |
ST Microelectronics |
(STP60N05-16 / STP60N06-16) N-CHANNEL Power MOSFET |
|
| 9 | STP60N06 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 10 | STP60N06-14 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 11 | STP60N06-14 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | STP60N06-16 |
ST Microelectronics |
(STP60N05-16 / STP60N06-16) N-CHANNEL Power MOSFET |
|