STP60NE03L-10 - ST Microelectronics

STP60NE03L-10 N-CHANNEL Power MOSFET

This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHI.

Features

Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o o Value 30 30 ± 15 60 42 240 120 0.8 7 -65 to 175 175 ( 1) ISD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Uni t V V V A A A W W/ C V/ ns o o o C C 1/8 (
•) Pulse width limited by safe operating area December 1997 STP60NE03L-10 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl.