This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED.
ource Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at T c = 25 oC Derating F actor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 60 42 240 150 1 6 -65 to 175 175
( 1) ISD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Value STP60NE06L-16 STP60NE06L-16FP 60 60 ± 15 35 24 140 45 0.3 2000
Un it V V V A A A W W /o C V V/ns
o o
C C 1/9
(
•) Pulse width limit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP60NE06L-16FP |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STP60NE06-16 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
3 | STP60NE06-16 |
INCHANGE |
N-Channel MOSFET | |
4 | STP60NE03L-10 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
5 | STP60NE03L-12 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | STP60NE10 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
7 | STP60N043DM9 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
8 | STP60N05-14 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
9 | STP60N05-16 |
ST Microelectronics |
(STP60N05-16 / STP60N06-16) N-CHANNEL Power MOSFET | |
10 | STP60N06 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
11 | STP60N06-14 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
12 | STP60N06-14 |
INCHANGE |
N-Channel MOSFET |