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STP60NE06-16 |
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| Part Number | STP60NE06-16 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely... |
| Features |
ID ID IDM ( • ) P t ot Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor o o V V V 35 24 240 40 0.3 2000 A A A W W/ C V V/ns o o o 60 42 240 150 1 6 -65 to 175 175 V ISO dV/dt T stg Tj Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. O perating Junction Temperature C C 1/9 ( •) Pulse width limited by safe operating area ( 1) ISD ≤ 60 A, di/dt ≤ 300 A... |
| Document |
 STP60NE06-16 Data Sheet
PDF 120.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP60NE06-16 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | STP60NE06L-16 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 3 | STP60NE06L-16FP |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 4 | STP60NE03L-10 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 5 | STP60NE03L-12 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|