STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 V DSS 50 V 60 V R DS(on) < 0.014 Ω < 0.014 Ω ID 60 A 60 A s s s s s s s s s TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPER.
issipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max Operating Junction Temperature
o o
Value STP60N05-14 50 50 ± 20 60 50 240 150 1 -65 to 175 175 STP60N06-14 60 60
Unit V V V A A A W/ o C
o
C C C
V
o o
(
•)Pulse width limited by safe operating area
March 1996
1/5
STP60N05-14/STP60N06-14
THERMAL DATA
R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1 62.5 0.5 300
o o
C/W C/W o C/W o C
AVALANCHE CHAR.
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP60N06-14 ·FEATURES ·With low gate drive requirements ·Easy t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP60N06-16 |
ST Microelectronics |
(STP60N05-16 / STP60N06-16) N-CHANNEL Power MOSFET | |
2 | STP60N06 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
3 | STP60N06FI |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
4 | STP60N043DM9 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
5 | STP60N05-14 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | STP60N05-16 |
ST Microelectronics |
(STP60N05-16 / STP60N06-16) N-CHANNEL Power MOSFET | |
7 | STP60N3LH5 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STP60N55F3 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
9 | STP60NE03L-10 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
10 | STP60NE03L-12 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
11 | STP60NE06-16 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
12 | STP60NE06-16 |
INCHANGE |
N-Channel MOSFET |