STP60N05-14 - ST Microelectronics

STP60N05-14 N-CHANNEL Power MOSFET

STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 V DSS 50 V 60 V R DS(on) < 0.014 Ω < 0.014 Ω ID 60 A 60 A s s s s s s s s s TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPER.

Features

issipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max Operating Junction Temperature o o Value STP60N05-14 50 50 ± 20 60 50 240 150 1 -65 to 175 175 STP60N06-14 60 60 Unit V V V A A A W/ o C o C C C V o o (
•)Pulse width limited by safe operating area March 1996 1/5 STP60N05-14/STP60N06-14 THERMAL DATA R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHAR.