This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPE.
tage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o o
Value 30 30 ± 20 60 42 240 100 0.67 5.5 -65 to 175 175
( 1) ISD ≤ 60 A, di/dt ≤ 450 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C 1/8
(
•) Pulse width limited by safe operating area
February 1999
STP60NE03L-12
THERMAL DATA
R thj -case
Rthj -amb
R.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP60NE03L-10 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
2 | STP60NE06-16 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
3 | STP60NE06-16 |
INCHANGE |
N-Channel MOSFET | |
4 | STP60NE06L-16 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
5 | STP60NE06L-16FP |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
6 | STP60NE10 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
7 | STP60N043DM9 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
8 | STP60N05-14 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
9 | STP60N05-16 |
ST Microelectronics |
(STP60N05-16 / STP60N06-16) N-CHANNEL Power MOSFET | |
10 | STP60N06 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
11 | STP60N06-14 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
12 | STP60N06-14 |
INCHANGE |
N-Channel MOSFET |