STP60NE06L-16FP - ST Microelectronics

STP60NE06L-16FP N-CHANNEL POWER MOSFET

This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED.

Features

r Drain-source Voltage (VGS =0 ) Dr ain- gat e Vol tage (RGS =2 0 k Ω )6 Gate-source Voltage Dr ain Current (cont inuous ) at T c =2 5 o C6 Dr ain Current (cont inuous ) at T c =1 00 oC4 Drain Cur rent (puls ed) Total Dissipation at T c =2 5 oC1 Der ating F actor Ins ulat ion Withstand Volt age (DC) Pea k Dio de Re cover y volt age slope Storage Tem per ature Max . Operating Junc tion Tempe ratur e 0 2 240 50 1  6 -65 to 175 175 ( 1)I SD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,T j ≤ TJMAX Value STP60N E06L -16 STP60NE 06L-16 FP 60 0 ± 15 35 24 140 45 0. 3 2000 Un it V V V A A A W W /o C V .