STP60NE06-16 |
Part Number | STP60NE06-16 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot var... |
Features |
·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 240 PD Total Dissipation 150 Tj Operating Junction Temperature 175 Tstg Storage Temperature -65~175 UNIT V V A A W ℃ ℃ ·THE... |
Document |
STP60NE06-16 Data Sheet
PDF 254.92KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | STP60NE06-16 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
2 | STP60NE06L-16 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
3 | STP60NE06L-16FP |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STP60NE03L-10 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
5 | STP60NE03L-12 |
ST Microelectronics |
N-CHANNEL Power MOSFET |