STP180N4F6 - STMicroelectronics

STP180N4F6 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP180N4F6 Table 1: Device summary Marking Package 180N4F6 TO-220 Packing Tube October 2016 DocID028221 Rev 2 This is information on a product in full.

Features

Order code VDS RDS(on) max. ID PTOT STP180N4F6 40 V 2.7 mΩ 120 A 190 W
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss Applications
 Switching applications
 Power tools Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP180N4F6 Table 1: Device summary Marking Package 180N4F6 TO-220 Packing Tube October 2016 DocID028221 Rev 2 This is information on a product in .