STP18N60M2 - STMicroelectronics

STP18N60M2 N-CHANNEL POWER MOSFET

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STB18N60M2 STI18N60M2 STP18N60M2 STW.

Features

Order codes VDS @ TJmax RDS(on) max. STB18N60M2 STI18N60M2 STP18N60M2 650 V 0.280 Ω STW18N60M2
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected ID 13 A Package D²PAK I²PAK TO-220 TO-247 Application
• Switching applications
• LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suita.