STP180N10F3 - STMicroelectronics

STP180N10F3 N-CHANNEL POWER MOSFET

This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram $4!" ' Table 1. Device summary Order codes STP180N10F3 Marki.

Features

Order codes VDSS STP180N10F3 100 V
■ Ultra low on-resistance
■ 100% avalanche tested RDS(on) max. 5.1 mΩ ID 120 A Applications
■ High current switching applications Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram $4!" ' Table 1. Device summary Order codes STP180N10F3 Marking 180N10F3 3 !-V Package TO-220 Packaging.