STP1806 - ST Microelectronics

STP1806 N-Channel Power MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SWITCHI.

Features

ain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 60 ± 20 50 35 200 110 0.73 7 350 -55 to 175 (2) Starting T j = 25 oC, ID = 25A, VDD = 30V (1) ISD ˆ50A, di/dt ˆ400A/µs, VDD ˆ V(BR)DSS, Tj ˆ TJMAX Unit V V V A A A W W/°C V/ns mJ °C (œ) Pulse width limited by safe operating area. November 2004 Rev.0.1 1/9 Free Datasheet http://www.Datasheet4U.com STP1806 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resista.