STP18N65M2 - STMicroelectronics

STP18N65M2 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Order code STI18N65M2 STP18N65M2 Table 1. Device summary Mar.

Features

TAB TAB 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram , TAB AM15572v1 Order code STI18N65M2 STP18N65M2 VDS 650V RDS(on) max ID 0.33Ω 12 A
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected Applications
• Switching applications
• LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering th.