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STP180N4F6 |
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| Part Number | STP180N4F6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code... |
| Features |
Order code VDS RDS(on) max.
ID
PTOT
STP180N4F6 40 V 2.7 mΩ 120 A 190 W
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Power tools Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP180N4F6 Table 1: Device summary Marking Package 180N4F6 TO-220 Packing Tube October 2016 DocID028221 Rev 2 This is information on a product in ... |
| Document |
 STP180N4F6 Data Sheet
PDF 557.23KB |
| Distributor | Stock | Price | Buy |
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