STP18N55M5 - INCHANGE

STP18N55M5 N-Channel MOSFET

isc N-Channel MOSFET Transistor STP18N55M5 FEATURES ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃.

Features

·Drain Current
  –ID=13A@ TC=25℃
·Drain Source Voltage- : VDSS= 550V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 550 V ±25 V 13 A 52 A 90 .