STP180NS04ZC - STMicroelectronics

STP180NS04ZC N-channel Power MOSFET

This fully clamped Power MOSFET is manufactured using an advanced mesh overlay process which is based on an innovative strip layout. The benefits of this technology, coupled with the extra clamping capabilities render this device particularly suitable for the harshest operating conditions, such as those associated with the automotive environment. The device .

Features

TAB 3 2 1 TO-220 Order code VDS RDS(on) max ID STP180NS04ZC 40 V clamped 4.2 mΩ 120 A
• Low capacitance and gate charge
• 100% avalanche tested
• 175 °C maximum junction temperature Applications
• Switching and linear applications Figure 1. Internal schematic diagram D(2,TAB) G(1) Description This fully clamped Power MOSFET is manufactured using an advanced mesh overlay process which is based on an innovative strip layout. The benefits of this technology, coupled with the extra clamping capabilities render this device particularly suitable for the harshest operating conditions, such a.