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STP180N55F3 - STMicroelectronics

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STP180N55F3 N-CHANNEL MOSFET

lete This n-channel enhancement mode Power MOSFET is the latest refinement of so STMicroelectronics unique “single feature size™” b strip-based process with less critical alignment O steps and therefore a remarkable manufacturing - reproducibility. The resulting transistor shows ) extremely high packing density for low on t(s resistance, rugged avalanche cha.

Features

Type VDSS RDS(on) ID Pw STB180N55F3 55V ) STP180N55F3 55V 3.5mΩ 120A(1) 330W 3.8mΩ 120A(1) 330W t(s 1. Value limited by wire bonding uc
■ Ultra low on-resistance d
■ 100% avalanche tested Pro Description lete This n-channel enhancement mode Power MOSFET is the latest refinement of so STMicroelectronics unique “single feature size™” b strip-based process with less critical alignment O steps and therefore a remarkable manufacturing - reproducibility. The resulting transistor shows ) extremely high packing density for low on t(s resistance, rugged avalanche characteristics and c low gate.

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