RJK2555DPA - Renesas Technology

RJK2555DPA Silicon N Channel MOS FET

RJK2555DPA Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 32 1 4 G 5 678 D DDD REJ03G1776-0200 Rev.2.00 Apr 09, 2009 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain .

Features

• Low on-resistance
• Low drive current
• High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 32 1 4 G 5 678 D DDD REJ03G1776-0200 Rev.2.00 Apr 09, 2009 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty c.