RJK2017DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1797-0200 Rev.2.00 Aug 26, 2009 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S www.DataSheet.co.kr Absolute Maximum Ratings (Ta = 25°C) Item Drain .
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
D
G
1. Gate 2. Drain 3. Source
1
2 3
S
www.DataSheet.co.kr
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW ≤ 10 μs, duty cycle ≤ 1% Value at Tc = 25°C STch = 25°C, Tch ≤ 150°C Limited by maximum .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK2017DPP-M0 |
Renesas |
MOSFET | |
2 | RJK2006DPE |
Renesas Technology |
Silicon N-Channel MOSFET | |
3 | RJK2006DPE |
INCHANGE |
N-Channel MOSFET | |
4 | RJK2006DPF |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
5 | RJK2006DPJ |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
6 | RJK2009DPM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
7 | RJK2054DPC |
Renesas |
N-Channel Power MOSFET | |
8 | RJK2055DPA |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
9 | RJK2057DPA |
Renesas |
Silicon N Channel MOS FET | |
10 | RJK2061JPE |
Renesas |
N-Channel Power MOSFET | |
11 | RJK2508DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
12 | RJK2511DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |