RJK2054DPC Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075 Ω typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting REJ03G1868-0100 Rev.1.00 Dec 08, 2009 Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 1(S) 2(S) 3(S) 4(G) 5 6 7 8 D D D D K2 05 4 8(D) 7(D).
• Low on-resistance RDS(on) = 0.075 Ω typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25°C)
• Low drive current
• High density mounting REJ03G1868-0100 Rev.1.00 Dec 08, 2009
Outline
RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i)
1(S) 2(S) 3(S) 4(G)
5 6 7 8 D D D D
K2 05 4
8(D) 7(D) 6(D) 5(D)
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
www.DataSheet.co.kr
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK2055DPA |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
2 | RJK2057DPA |
Renesas |
Silicon N Channel MOS FET | |
3 | RJK2006DPE |
Renesas Technology |
Silicon N-Channel MOSFET | |
4 | RJK2006DPE |
INCHANGE |
N-Channel MOSFET | |
5 | RJK2006DPF |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
6 | RJK2006DPJ |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
7 | RJK2009DPM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
8 | RJK2017DPP |
Renesas |
N-Channel Power MOSFET | |
9 | RJK2017DPP-M0 |
Renesas |
MOSFET | |
10 | RJK2061JPE |
Renesas |
N-Channel Power MOSFET | |
11 | RJK2508DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
12 | RJK2511DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |