RJK2006DPJ, RJK2006DPE, RJK2006DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G0512-0100 Rev.1.00 Jan.14.2005 Features • Low on-resistance • Low leakage current • High speed switching Outline LDPAK D 4 4 4 G 1 1 2 3 1 S 3 RJK2006DPE 2 3 RJK2006DPF RJK2006DPJ 2 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C).
• Low on-resistance
• Low leakage current
• High speed switching
Outline
LDPAK
D 4 4 4
G 1
1
2
3
1
S
3 RJK2006DPE 2 3 RJK2006DPF RJK2006DPJ
2
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current www.DataSheet4U.com Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK2006DPE |
Renesas Technology |
Silicon N-Channel MOSFET | |
2 | RJK2006DPE |
INCHANGE |
N-Channel MOSFET | |
3 | RJK2006DPF |
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Silicon N Channel MOS FET High Speed Power Switching | |
4 | RJK2009DPM |
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Silicon N Channel MOS FET High Speed Power Switching | |
5 | RJK2017DPP |
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N-Channel Power MOSFET | |
6 | RJK2017DPP-M0 |
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MOSFET | |
7 | RJK2054DPC |
Renesas |
N-Channel Power MOSFET | |
8 | RJK2055DPA |
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Silicon N Channel MOS FET High Speed Power Switching | |
9 | RJK2057DPA |
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Silicon N Channel MOS FET | |
10 | RJK2061JPE |
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N-Channel Power MOSFET | |
11 | RJK2508DPK |
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Silicon N Channel MOS FET High Speed Power Switching | |
12 | RJK2511DPK |
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Silicon N Channel MOS FET High Speed Power Switching |