RJK2006DPE - INCHANGE

RJK2006DPE N-Channel MOSFET

Isc N-Channel MOSFET Transistor RJK2006DPE ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS .

Features

·With To-252(DPAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 40 100 PD Total Dissipation @TC=25℃ 100 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃
·THERMAL CHARAC.