RJK2555DPA |
Part Number | RJK2555DPA |
Manufacturer | Renesas (https://www.renesas.com/) Technology |
Description | RJK2555DPA Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK... |
Features |
• Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 32 1 4 G 5 678 D DDD REJ03G1776-0200 Rev.2.00 Apr 09, 2009 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty c... |
Document |
RJK2555DPA Data Sheet
PDF 91.92KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK2557DPA |
Renesas Technology |
Silicon N Channel MOS FET | |
2 | RJK2508DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
3 | RJK2511DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
4 | RJK2006DPE |
Renesas Technology |
Silicon N-Channel MOSFET | |
5 | RJK2006DPE |
INCHANGE |
N-Channel MOSFET |