RJK2508DPK - Renesas Technology

RJK2508DPK Silicon N Channel MOS FET High Speed Power Switching

RJK2508DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G0508-0200 Rev.2.00 Feb.10.2005 Features • Low on-resistance • Low leakage current • High speed switching Outline PRSS0004ZE-A (Previous code: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) www.DataSheet4U.com Item Drain to Source volt.

Features

• Low on-resistance
• Low leakage current
• High speed switching Outline PRSS0004ZE-A (Previous code: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) www.DataSheet4U.com Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch.