RJK2557DPA Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 32 1 4 G 5 678 D DDD REJ03G1777-0200 Rev.2.00 Apr 09, 2009 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain .
• Low on-resistance
• Low drive current
• High density mounting
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5 678 4 32 1
4 G
5 678 D DDD
REJ03G1777-0200 Rev.2.00
Apr 09, 2009
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S SS 1 23
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK2555DPA |
Renesas Technology |
Silicon N Channel MOS FET | |
2 | RJK2508DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
3 | RJK2511DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
4 | RJK2006DPE |
Renesas Technology |
Silicon N-Channel MOSFET | |
5 | RJK2006DPE |
INCHANGE |
N-Channel MOSFET | |
6 | RJK2006DPF |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
7 | RJK2006DPJ |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
8 | RJK2009DPM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
9 | RJK2017DPP |
Renesas |
N-Channel Power MOSFET | |
10 | RJK2017DPP-M0 |
Renesas |
MOSFET | |
11 | RJK2054DPC |
Renesas |
N-Channel Power MOSFET | |
12 | RJK2055DPA |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |