RJK2009DPM - Renesas Technology

RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching

RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G0474-0200 Rev.2.00 Aug.09.2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings www.DataSheet4U.com (Ta = 25°C) Symbol VDSS VGS.

Features

• Low on-resistance
• Low leakage current
• High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings www.DataSheet4U.com (Ta = 25°C) Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 200 ±30 40 160 40 160 40 106 60 2.08 150
  –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current A.