PHD13003C - NXP

PHD13003C NPN power transistor

High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package 1.2 Features and benefits „ Fast switching „ High typical DC current gain „ High voltage capability „ Integrated anti-parallel E-C diode 1.3 Applications „ Compact fluorescent lamps (CFL) „ Low power e.

Features

„ Fast switching „ High typical DC current gain „ High voltage capability „ Integrated anti-parallel E-C diode 1.3 Applications „ Compact fluorescent lamps (CFL) „ Low power electronic lighting ballasts „ Off-line self-oscillating power supplies (SOPS) for battery charging 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IC collector current DC Ptot total power Tlead ≤ 25 °C; see Figure 1 dissipation VCESM collector-emitter VBE = 0 V peak voltage Static characteristics hFE DC current gain IC = 0.5 A; VCE = 2 V; Tj = 25 °C Min Typ Max Unit - - .