High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package. 1.2 Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode Low thermal resistance 1.3 Applications Integrated fluorescent lamp ballasts e.g. high power cluster lam.
Fast switching High voltage capability Integrated anti-parallel E-C diode Low thermal resistance 1.3 Applications Integrated fluorescent lamp ballasts e.g. high power cluster lamps Low Voltage Tungsten Halogen transformers Remote fluorescent lamp ballasts Self Oscillating Power Supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IC collector current see Figure 1; see Figure 2; see Figure 4; DC Ptot total power dissipation see Figure 3; Tmb ≤ 25 °C VCESM collector-emitter peak voltage VBE = 0 V Static characteristics hFE .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHD13003C |
NXP |
NPN power transistor | |
2 | PHD13003C |
WeEn |
NPN power transistor | |
3 | PHD101NQ03LT |
NXP |
N-Channel MOSFET | |
4 | PHD108NQ03LT |
NXP |
N-Channel MOSFET | |
5 | PHD10N10E |
NXP |
Transistor | |
6 | PHD110NQ03LT |
NXP |
N-channel FET | |
7 | PHD11N03LT |
NXP |
N-Channel MOSFET | |
8 | PHD11N06LT |
NXP |
Transistor | |
9 | PHD12N10E |
NXP |
Transistor | |
10 | PHD12NQ15T |
NXP |
N-Channel Transistor | |
11 | PHD16N03LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
12 | PHD16N03T |
NXP Semiconductors |
TrenchMOS standard level FET |