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N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB12NQ15T is supplied in the SOT404.
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
VDSS = 150 V ID = 12.5 A
g
RDS(ON) ≤ 200 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB12NQ15T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD12NQ15T is supplied in the SOT4.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHD12N10E |
NXP |
Transistor |
|
| 2 | PHD101NQ03LT |
NXP |
N-Channel MOSFET |
|
| 3 | PHD108NQ03LT |
NXP |
N-Channel MOSFET |
|
| 4 | PHD10N10E |
NXP |
Transistor |
|
| 5 | PHD110NQ03LT |
NXP |
N-channel FET |
|
| 6 | PHD11N03LT |
NXP |
N-Channel MOSFET |
|
| 7 | PHD11N06LT |
NXP |
Transistor |
|
| 8 | PHD13003C |
NXP |
NPN power transistor |
|
| 9 | PHD13003C |
WeEn |
NPN power transistor |
|
| 10 | PHD13005 |
NXP |
NPN power transistor |
|
| 11 | PHD16N03LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET |
|
| 12 | PHD16N03T |
NXP Semiconductors |
TrenchMOS standard level FET |
|