PHD10N10E - NXP

PHD10N10E Transistor

N-channel enhancement mode field-effect power transistor in a plastic envelope suuitable for surface mounting. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source volt.

Features

r dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 30 11 7.7 44 60 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. pcb mounted, minimum footprint 50 MAX. 2.5 UNIT K/W K/W September 1997 1 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor PHD10N10E STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS.