N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source volta.
dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 30 14 10 56 75 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. pcb mounted, minimum footprint 50 MAX. 2 UNIT K/W K/W September 1997 1 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor PHD12N10E STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHD12NQ15T |
NXP |
N-Channel Transistor | |
2 | PHD101NQ03LT |
NXP |
N-Channel MOSFET | |
3 | PHD108NQ03LT |
NXP |
N-Channel MOSFET | |
4 | PHD10N10E |
NXP |
Transistor | |
5 | PHD110NQ03LT |
NXP |
N-channel FET | |
6 | PHD11N03LT |
NXP |
N-Channel MOSFET | |
7 | PHD11N06LT |
NXP |
Transistor | |
8 | PHD13003C |
NXP |
NPN power transistor | |
9 | PHD13003C |
WeEn |
NPN power transistor | |
10 | PHD13005 |
NXP |
NPN power transistor | |
11 | PHD16N03LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
12 | PHD16N03T |
NXP Semiconductors |
TrenchMOS standard level FET |