PHD16N03T - NXP Semiconductors

PHD16N03T TrenchMOS standard level FET

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHD16N03T in SOT428 (D-PAK). 1.2 Features s Fast Switching s TrenchMOSTM technology. 1.3 Applications s DC-to-DC converters s General purpose switch. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 32.6 W s ID ≤ 13.1 A s RDSon ≤ 100 mΩ..

Features

s Fast Switching s TrenchMOSTM technology. 1.3 Applications s DC-to-DC converters s General purpose switch. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 32.6 W s ID ≤ 13.1 A s RDSon ≤ 100 mΩ. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428, simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d) 2 1 Top view 3 MBK091 MBB076 Simplified outline [1] Symbol mb d g s SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the SOT428 package. Philips Semiconductors PHD16N03T www.DataSheet4U.com TrenchMOS™ stan.