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N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP18NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB18NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD18NQ10T is supplied in .
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
VDSS = 100 V ID = 18 A
g
RDS(ON) ≤ 90 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:
• d.c. to d.c. converters
• switched mode power supplies The PHP18NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB18NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD18NQ10T is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTI.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHD101NQ03LT |
NXP |
N-Channel MOSFET |
|
| 2 | PHD108NQ03LT |
NXP |
N-Channel MOSFET |
|
| 3 | PHD10N10E |
NXP |
Transistor |
|
| 4 | PHD110NQ03LT |
NXP |
N-channel FET |
|
| 5 | PHD11N03LT |
NXP |
N-Channel MOSFET |
|
| 6 | PHD11N06LT |
NXP |
Transistor |
|
| 7 | PHD12N10E |
NXP |
Transistor |
|
| 8 | PHD12NQ15T |
NXP |
N-Channel Transistor |
|
| 9 | PHD13003C |
NXP |
NPN power transistor |
|
| 10 | PHD13003C |
WeEn |
NPN power transistor |
|
| 11 | PHD13005 |
NXP |
NPN power transistor |
|
| 12 | PHD16N03LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET |
|