PHD108NQ03LT - NXP

PHD108NQ03LT N-Channel MOSFET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Simple gate drive required due to low .

Features

„ Low conduction losses due to low on-state resistance „ Simple gate drive required due to low gate charge „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC convertors „ Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Avalance ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics VGS = 10 V; Tj.