PHD110NQ03LT - NXP

PHD110NQ03LT N-channel FET

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold s Low on-state resistance s Low gate charge s Surface mount package. 1.3 Applications s Control FET in DC-to-DC converters s Switched-mode power supplies. 1.4 Quick reference data s VDS ≤ 25 V s Ptot ≤ 115 W s ID ≤ 75 A .

Features

s Logic level threshold s Low on-state resistance s Low gate charge s Surface mount package. 1.3 Applications s Control FET in DC-to-DC converters s Switched-mode power supplies. 1.4 Quick reference data s VDS ≤ 25 V s Ptot ≤ 115 W s ID ≤ 75 A s RDSon ≤ 4.6 mΩ. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d) 2 1 Top view 3 MBK091 Simplified outline [1] Symbol d mb g mbb076 s SOT428 (D-PAK) [1] It is not possible to make a connection to pin 2 of the SOT428 .