PHB110NQ08T - NXP Semiconductors

PHB110NQ08T N-Channel MOSFET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for standard level gate dr.

Features

„ Low conduction losses due to low on-state resistance „ Suitable for standard level gate drive sources 1.3 Applications „ DC-to-DC convertors „ General industrial applications „ Motors, lamps and solenoids „ Uninterruptible power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 Tmb = 25 °C; see Figure 2 Min Typ Max 75 75 230 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation gate-drain charge Symbol Parameter Dynamic characteristics QGD VGS = 10 V; ID = 25 A; VDS = 60 V; .